document number: 94607 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 hexfred ? ultrafast soft recovery diode, 200 a HFA200FA120P vishay semiconductors features ? fast recovery time characteristic ? electrically isolated base plate ? large creepage distance between terminal ? simplified mechanical designs, rapid assembly ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description/applications the dual diode series confi guration (HFA200FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application. the semiconductor in the sot-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. these modules are intended fo r general applications such as hv power supplies, electron ic welders, motor control and inverters. product summary v r 1200 v v f (typical) 2.7 v t rr (typical) 150 ns i f(dc) at t c 100 a at 69 c sot-227 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 1200 v continuous forward current i f t c = 69 c 100 a single pulse forward current i fsm t j = 25 c 900 maximum repetitive forward current i frm rated v r, square wave, 20 khz, t c = 60 c 150 maximum power dissipation p d t c = 25 c 416 w t c = 100 c 166 rms isolation voltage v isol any terminal to case, t = 1 minute 2500 v operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v forward voltage v fm i f = 100 a - 2.68 3.6 i f = 200 a - 3.37 4.7 i f = 100 a, t j = 150 c - 2.7 2.9 reverse leakage current i rm v r = v r rated - 10 75 a t j = 125 c, v r = v r rated - 2 - ma
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94607 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 HFA200FA120P vishay semiconductors hexfred ? ultrafast soft recovery diode, 200 a dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units reverse recovery time t rr t j = 25 c i f = 50 a di f /dt = - 200 a/s v r = 200 v - 150 - ns t j = 125 c - 237 - peak recovery current i rrm t j = 25 c - 14 - a t j = 125 c - 21 - reverse recovery charge q rr t j = 25 c - 1050 - nc t j = 125 c - 2430 - thermal - mechanical specifications parameter symbol test condit ions min. typ. max. units junction to case, si ngle leg conducting r thjc --0.3 c/w junction to case, both legs conducting - - 0.15 case to heatsink r thcs flat, greased and surface - 0.05 - weight -30- g mounting torque -1.3-nm
document number: 94607 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 HFA200FA120P hexfred ? ultrafast soft reco very diode, 200 a vishay semiconductors fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - maximum thermal impedance z thjc characteristics fig. 4 - maximum allowable case temperature vs. average forward current fig. 5 - forward power loss characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 1000 tj = 25c tj = 125c tj = 150c reverse current - i r (ma) reverse voltage - v r (v) 200 400 600 800 1000 1200 0.0001 0.001 0.01 0.1 1 10 125c 150c 25c t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.001 0.01 0.1 1 single pulse (thermal resistance) d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75 average forward current - i f (av) (a) allowable case temperature (c) 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 dc square wave (d=0.50) 80% rated vr applied see note (1) average forward current - i f (av) (a) average power loss - (watts) 020406080100120140160 0 50 100 150 200 250 300 350 400 450 180 120 90 60 30 dc rms limit
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94607 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 HFA200FA120P vishay semiconductors hexfred ? ultrafast soft recovery diode, 200 a fig. 6 - typical reverse recovery time vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical peak recovery current vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 5); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r di f /dt (a/s) t rr (ns) 0 0 1 0 0 10 50 100 150 200 250 300 vr = 200v if = 50a, tj = 25c if = 50a, tj = 125c di f /dt (a/s) q rr (nc) 0 0 1 0 0 10 0 500 1000 1500 2000 2500 3000 3500 4000 vr = 200v if = 50a, tj = 25c if = 50a, tj = 125c di f /dt (a/s) i rr (a) 0 0 1 0 0 10 0 10 20 30 40 50 vr = 200v if = 50a, tj = 25c if = 50a, tj = 125c
document number: 94607 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 HFA200FA120P hexfred ? ultrafast soft reco very diode, 200 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94607 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 HFA200FA120P vishay semiconductors hexfred ? ultrafast soft recovery diode, 200 a ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 1 2 3 4 5 6 device code 5 13 24 6 hf a 200 fa 120 p - hexfred ? family - process designator (a = electron irradiated) - average current (200 = 200 a) - package outline (fa = sot-227) - voltage rating (120 = 1200 v) - p = lead (pb)-free 1 4 2 3
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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